TSV Fabrication Technology (2)

Fabrication Technology

Wireless CMOS TSV

Short-rage wireless communication technology has been widely applied. In the ubiquitous era, applications for connecting things have been expanding. When communication range is shorter than 1/10 of its wave length, the electromagnetic field shows unique characteristics of near field. For instance, inter-chip wireless communication of chips that are stacked in a package is the near-field communi...

TSV-Based 3D Integration

Theoretical studies in the 1980s [1, 2] suggested that significant reductions in signal delay and power consumption could be achieved with 3D integrated circuits (3D ICs). A 3D IC is a chip that consists of multiple tiers of thinned-active 2D integrated circuits (2D ICs) that are stacked, bonded, and electrically connected with vertical vias formed through silicon or oxide layers and whose plac...

Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)

3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related fai...

ITER first wall fabrication technology in China

China has done R&Ds on the fabrication technology for ITER first wall (FW). The FW materials, such as the vacuum-hot-pressing (VHP) Be and ITER-grade CuCrZr alloys, have been developed in China. The Be plate showed good physical and mechanical properties, similar to S65C. The effect of fabrication process on mechanical strength of CuCrZr alloy was studied. Several FW qualification (FWQ) mock-up...